IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 15 V; I

Note 1

11

21

S

C

iss

4200

pF

C

oss

V

450

pF

C

rss

135

pF

t

d(on)

16

ns

t

r

V

V

33

ns

t

d(off)

R

65

ns

t

f

30

ns

Q

g(on)

135

nC

Q

gs

V

V

28

nC

Q

gd

62

nC

R

thJC

0.54

K/W

R

thCK

0.30

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

26

A

I

SM

Repetitive; pulse width limited by T

JM

104

A

V

SD

I

1.5

V

t

rr

T

25

°C

250

ns

T

400

ns

Q

RM

T

25

°C1

1µC

T

µC

I

RM

T

25

°C10

A

T

A

I

V

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

IXFC26N50

I

IXFC24N50

I

3. See IXFH26N50 data sheet for characteristic curves.

IXFC 26N50

IXFC 24N50

ISOPLUS220 OUTLINE

Note: All terminals are solder plated.

1 - Gate

2 - Drain

3 - Source