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DN3525 датащи(PDF) 3 Page - Microchip Technology

номер детали DN3525
подробное описание детали  N-Channel Depletion-Mode Vertical DMOS FET
PDF  14 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

DN3525 датащи(HTML) 3 Page - Microchip Technology

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AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is
not 100% tested.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Forward Transconductance
GFS
225
mmho VDS = 10V, ID = 150 mA
Input Capacitance
CISS
270
350
pF
VGS = –5V,
VDS = 25V,
f = 1 MHz
Common Source Output
Capacitance
COSS
20
60
pF
Reverse Transfer Capacitance
CRSS
5
20
pF
Turn-On Delay Time
td(ON)
20
ns
VDD = 25V,
ID = 150 mA,
RGEN = 25Ω,
VGS = 0V to –10V
Rise Time
tr
25
ns
Turn-Off Delay Time
td(OFF)
25
ns
Fall Time
tf
40
ns
DIODE PARAMETER
Diode Forward Voltage Drop
VSD
1.8
V
VGS = –5V, ISD = 150 mA
(Note 1)
Reverse Recovery Time
trr
800
ns
VGS = –5V, ISD = 150 mA
Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty
cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
TA
–55
+150
°C
Storage Temperature
TS
–55
+150
°C
PACKAGE THERMAL RESISTANCE
3-lead SOT-89
JA
133
°C/W
THERMAL CHARACTERISTICS
Package
ID (Note 1)
(Continuous)
(mA)
ID
(Pulsed)
(A)
Power Dissipation at
TA = 25°C
(Note 2)
(W)
IDR (Note 1)
(mA)
IDRM
(A)
3-lead SOT-89
360
1
1.6
360
1
Note 1: ID (continuous) is limited by maximum TJ.
2: Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm
 2018 Microchip Technology Inc.
DS20005705A-page 3
DN3525



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