DN3525 datasheet(2/14 Pages) MICROCHIP

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DN3525

DS20005705A-page 2

 2018 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-Source Voltage....................................................................................................................................... BVDSX

Drain-to-Gate Voltage .......................................................................................................................................... BVDGX

Gate-to-Source Voltage ......................................................................................................................................... ±20V

Operating Ambient Temperature, TA .................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless

otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-Source Breakdown

Voltage

BVDSX

250

—

VGS = –5V, ID = 100 µA

Gate-to-Source Off Voltage

VGS(OFF)

–1.5

—

–3.5

VDS = 15V, ID = 1 mA

Change in VGS(OFF) with

Temperature

∆VGS(OFF)

—

–4.5

mV/°C VDS = 15V, ID = 1 mA (Note 1)

Gate Body Leakage Current

IGSS

—

100

VGS = ±20 V, VDS = 0V

Drain-to-Source Leakage Current

ID(OFF)

—

µA

VDS = Maximum rating,

VGS = –5V

—

VDS = 0.8 Maximum rating,

VGS = –5V, TA = 125°C (Note 1)

Saturated Drain-to-Source Current

IDSS

300

—

VGS = 0V, VDS = 15V

Static Drain-to-Source On-State



Resistance

RDS(ON)

—

Ω

VGS = 0V, ID = 200 mA

Change in RDS(ON) with

Temperature

∆RDS(ON)

—

1.1

%/°C

VGS = 0V, ID = 200 mA (Note 1)

Note 1: Specification is obtained by characterization and is not 100% tested.

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