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PJM3422NSA датащи(PDF) 4 Page - Dongguan Pingjingsemi Technology Co., Ltd,

номер детали PJM3422NSA
подробное описание детали  N- Enhancement Mode Field Effect Transistor
PDF  7 Pages
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производитель  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
домашняя страница  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3422NSA датащи(HTML) 4 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM3422NSA Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3422NSA Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3422NSA Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3422NSA Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3422NSA Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3422NSA Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3422NSA Datasheet HTML 7Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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PJM3422NSA
N- Enhancement Mode Field Effect Transistor
www.pingjingsemi.com
4 / 7
Revison：1.0 Apr-2019
0
1
2
3
4
5
0
3
1
2
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
40
80
120
160
200
240
280
320
360
400
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
5
10
15
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001
0.0001
0.1
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss
Crss
0.1
1.0
10.0
100.0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=27.5V
ID=2.1A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
Ton
T
PD
order
In descending
0.02, 0.01,
0.3, 0.1, 0.05,
D=0.5,
single pulse
TJ(Max)=150°C
TA=25°C



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