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PJM10H02NSA датащи(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

номер детали PJM10H02NSA
подробное описание детали  N- Enhancement Mode Field Effect Transistor
PDF  7 Pages
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производитель  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
домашняя страница  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM10H02NSA датащи(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
2
A
Drain Current-Pulsed Note1
IDM
5
A
Maximum Power Dissipation
PD
1.25
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Resistance,Junction-to-Ambient Note2
RθJA
100
℃
/
W
PJM10H02NSA
N- Enhancement Mode Field Effect Transistor
1 / 7
SOT-23
1
2
Gate
Source
3Drain
Applications
Power switching application
Uninterruptible power supply
Features
VDS = 100V,ID = 2A
RDS(ON) = 210mΩ(Typ.) @ VGS=10V
High density cell design for ultra low RDS(on)
Excellent package for good heat dissipation
Schematic diagram
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal Characteristics
www.pingjingsemi.com
Revision：1.0 Feb-2019
1. Gate 2.Source 3.Drain
Marking: G1003A


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