1.

Product profile

1.1 General description

Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and power supply equipment.

1.2 Features and benefits

and conduction losses

sources

1.3 Applications

1.4 Quick reference data

PSMN035-100LS

N-channel DFN3333-8 100 V 32 m

Ω standard level MOSFET

Rev. 3 — 12 December 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

100

V

drain current

--27

A

total power dissipation

--65

W

junction temperature

-55

-

150

°C

Static characteristics

see Figure 12

--63

m

Ω

see Figure 13

-

2932m

Ω

Dynamic characteristics

gate-drain charge

see Figure 14; see Figure 15

-7

-nC

total gate charge

-

23

-

nC

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

--37

mJ