PSMN035-100LS

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Product data sheet

Rev. 3 — 12 December 2011

6 of 14

NXP Semiconductors

PSMN035-100LS

N-channel DFN3333-8 100 V 32 m

Ω standard level MOSFET

Source-drain diode

source-drain voltage

see Figure 17

-

0.85

1.2

V

reverse recovery time

-52

-ns

recovered charge

-

102

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003a a e 357

0

10

20

30

40

0

1020

3040

(S)

003a a e 356

0

10

20

30

0246

(A)

003a a e 359

0

500

1000

1500

2000

02

468

C

(pF)

003a a e 360

0

20

40

60

80

100

0

5

10

15

20

(m

Ω)