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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L433CB датащи(PDF) 176 Page - STMicroelectronics |
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STM32L433CB датащи(HTML) 176 Page - STMicroelectronics |
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176 / 225 page  Electrical characteristics STM32L433xx 176/225 DS11449 Rev 5 GM Gain margin Normal mode - 13 - dB Low-power mode - 20 - tWAKEUP Wake up time from OFF state. Normal mode CLOAD ≤ 50 pf, RLOAD ≥ 4 kΩ follower configuration -5 10 µs Low-power mode CLOAD ≤ 50 pf, RLOAD ≥ 20 kΩ follower configuration -10 30 Ibias OPAMP input bias current General purpose input - - -(4) nA PGA gain(3) Non inverting gain value - -2- - -4- -8- -16 - Rnetwork R2/R1 internal resistance values in PGA mode(5) PGA Gain = 2 - 80/80 - kΩ/kΩ PGA Gain = 4 - 120/ 40 - PGA Gain = 8 - 140/ 20 - PGA Gain = 16 - 150/ 10 - Delta R Resistance variation (R1 or R2) --15 - 15 % PGA gain error PGA gain error - -1 - 1 % PGA BW PGA bandwidth for different non inverting gain Gain = 2 - - GBW/ 2 - MHz Gain = 4 - - GBW/ 4 - Gain = 8 - - GBW/ 8 - Gain = 16 - - GBW/ 16 - Table 86. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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