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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L433CB датащи(PDF) 172 Page - STMicroelectronics |
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STM32L433CB датащи(HTML) 172 Page - STMicroelectronics |
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172 / 225 page  Electrical characteristics STM32L433xx 172/225 DS11449 Rev 5 IDDA(VREF BUF) VREFBUF consumption from VDDA Iload = 0 µA - 16 25 µA Iload = 500 µA - 18 30 Iload = 4 mA - 35 50 1. Guaranteed by design, unless otherwise specified. 2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which will follow (VDDA - drop voltage). 3. Guaranteed by test in production. 4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise. 5. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1. Table 84. VREFBUF characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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