WeEn Semiconductors

WNB111S5APTS

Ultrafast power diode - Bare die

WNB111S5APTS

Product data sheet

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9 October 2018

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5. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse voltage

-

600

V

crest working reverse voltage

-

600

V

reverse voltage

DC

-

600

V

average forward current

δ = 0.5; square-wave pulse

-

15

A

repetitive peak forward current

-

30

A

non-repetitive peak forward

current

pulse

-

180

A

pulse

-

200

A

storage temperature

-65

175

°C

junction temperature

-

175

°C