PRELIMINARY

Rev. 3.0

- 1 -

July 2004

PRELIMINARY

K6R1004C1D

CMOS SRAM

Document Title

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 1.0

Rev. 2.0

Rev. 3.0

Remark

Preliminary

Preliminary

Preliminary

Final

Final

Final

History

Initial release with Preliminary.

Current modify

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

1. Final datasheet release.

2. Delete UB,LB releated AC characteristics and timing diagram.

1. Delete 12ns speed bin.

1. Add the Lead Free Package type.

Item

Previous

Current

10ns

85mA

75mA

12ns

75mA

65mA

Draft Data

June. 8. 2001

September. 9. 2001

December. 18. 2001

June. 19. 2002

July. 8. 2002

July. 26, 2004