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IXTY05N100 датащи(PDF) 4 Page - IXYS Corporation |
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IXTY05N100 датащи(HTML) 4 Page - IXYS Corporation |
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4 / 6 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTU05N100 IXTY05N100 Fig. 7. Transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1 1.2 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 8. Forward Voltage Drop of Intrinsic Diode 0.0 0.5 1.0 1.5 2.0 2.5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 9. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 012 34 56 78 QG - NanoCoulombs VDS = 500V I D = 1A I G = 1mA Fig. 10. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 11. Forward-Bias Safe Operating Area @ TC = 25 oC 0.01 0.1 1 10 10 100 1,000 VDS - Volts 1ms 100μs RDS(on) Limit 10ms 100ms DC TJ = 150 oC TC = 25 oC Single Pulse Fig. 12. Forward-Bias Safe Operating Area @ TC = 75 oC 0.01 0.1 1 10 10 100 1,000 VDS - Volts 1ms 100μs RDS(on) Limit 10ms 100ms DC TJ = 150 oC TC = 75 oC Single Pulse 25μs |
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