IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTU05N100

IXTY05N100

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

Note 1

0.55

0.93

S

C

iss

260

pF

C

oss

V

22

pF

C

rss

8

pF

t

d(on)

11

ns

t

r

19

ns

t

d(off)

40

ns

t

f

28

ns

Q

g(on)

7.8

nC

Q

gs

V

1.4

nC

Q

gd

4.1

nC

R

thJC

3.1

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

750 mA

I

SM

Repetitive, Pulse Width Limited by T

JM

3

A

V

SD

I

1.5

V

t

rr

710

ns

TO-252 AA Outline

1 - Gate

2,4 - Drain

3 - Source

L1

b2

e1

L4

E

A

c2

H

A1

A2

L2

L

A

e

c

0

e1

e1

e1

e1

e1

OPTIONAL

5.55MIN

1.25MIN

6.50MIN

2.28

6.40

BOTTOM

VIEW

2.85MIN

LAND PATTERN RECOMMENDATION

4

1

2

3

4

L3

b3

TO-251Outline

1. Gate

2.Drain

3. Source

4. Drain

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

2.19

2.38

.086

.094

A1

0.89

1.14

0.35

.045

b

0.64

0.89

.025

.035

b1

0.76

1.14

.030

.045

b2

5.21

5.46

.205

.215

c

0.46

0.58

.018

.023

c1

0.46

0.58

.018

.023

D

5.97

6.22

.235

.245

E

6.35

6.73

.250

.265

e

2.28

BSC

.090

BSC

e1

4.57

BSC

.180

BSC

H

17.02

17.78

.670

.700

L

8.89

9.65

.350

.380

L1

1.91

2.28

.075

.090

L2

0.89

1.27

.035

.050