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PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

-600

-

-

V

Collector-Emitter Breakdown Voltage

-600

-

-

V

Emitter-Base Breakdown Voltage

-7

-

-

V

Collector Cut-off Current

-

-

-1

µA

Collector Cut-off Current

-

-

-3

µA

Emitter Cut-off Current

-

-

-1

µA

ON CHARACTERISTICS

Forward-Current Transfer Ratio

54

-

310

-

Collector-Emitter Saturation Voltage

-

-

-0.5

V

Base Saturation Voltage

-

-

-1

V

SMALL SIGNAL CHARACTERISTICS

1

Transition Frequency

-

25

-

MHz

Output Capacitance

-

20

-

pF

Turn-on time

-

-

0.5

µs

Storage time

-

-

5

µs

Fall time

-

-

0.5

µs

 

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-600

V

Collector-Emitter Voltage

-600

V

Emitter-Base Voltage

-7

V

Collector Current

-280

mA

Collector Current (Pulse)

-560

mA

Junction Temperature

150

°C

Storage Temperature

-55 to 150

°C

PNP Transistor Bare Die ‐ BTP981

Rev 1.0

07/07/17

1. Not production testing in die form. Characterized by chip design and tested in package.

Figure 1 – DC Current Gain Vs. Collector Current

Figure 2 – Collector Current Vs. Collector‐to‐Emitter Voltage

Typical Electrical Characteristics