High Speed CMOS Logic – 54HC30

 

8-Input NAND Gate Logic IC in bare die form

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Low Input Current: 1µA

Output Drive Capability: 10 LSTTL loads

Outputs Directly Interface to CMOS, NMOS, & TTL

Operating Voltage Range: 2V to 6V

CMOS High Noise Immunity

Function compatible with 54LS30

Full Military Temperature Range.

Rev 1.0

7/5/2019

Features:

Ordering Information

Description

The 54HC30 8-Input NAND Gate is made using a

2.5µm 5V CMOS process & combines the high speed

of LSTTL with CMOS low power consumption. The

device performs Boolean functions in positive logic:

Y = A • B • C • D • E • F • G • H or

Y = A + B + C + D + E + F + G + H.

Device inputs are compatible with standard CMOS

outputs; with pull-up resistors, they are compatible with

LSTTL outputs. Internal circuitry comprises 3 stages &

includes buffered output for high noise immunity &

stability.

Die Dimensions in µm (mils)

The following part suffixes apply:

1030 (40)

No suffix - MIL-STD-883 /2010B Visual Inspection

“H” - MIL-STD-883 /2010B Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-883 /2010A Visual Inspection (Space)

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

Default – Die in Waffle Pack (400 per tray capacity)

Sawn Wafer on Tape – On request

Unsawn Wafer – On request

Die Thickness <> 350µm(14 Mils) – On request

Assembled into Ceramic Package – On request

Die Size (Unsawn)

1030 x 1270

40 x 50

µm

mils

Minimum Bond Pad Size

108 x 108

4.25 x 4.25

µm

mils

Die Thickness

350 (±20)

13.78 (±0.79)

µm

mils

Top Metal Composition

Al 1%Si 1.1µm

Back Metal Composition

N/A – Bare Si

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