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L6710 датащи(PDF) 11 Page - STMicroelectronics |
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L6710 датащи(HTML) 11 Page - STMicroelectronics |
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11 / 34 page ![]() 11/34 L6710 Figure 2. Drivers peak current: High Side (left) and Low Side (right). CURRENT READING AND OVER CURRENT The current flowing trough each phase is read using the voltage drop across the low side mosfets RdsON or across a sense resistor (RSENSE) and internally converted into a current. The transconductance ratio is issued by the external resistor Rg placed outside the chip between ISENx and PGNDS pins toward the reading points. The differential current reading rejects noise and allows to place sensing element in different locations without affecting the measurement's accuracy. The current reading circuitry reads the current during the time in which the low-side mosfet is on (OFF Time). During this time, the reaction keeps the pin ISENx and PGNDS at the same voltage while during the time in which the reading circuitry is off, an internal clamp keeps these two pins at the same voltage sinking from the ISENx pin the necessary current (Needed if low-side mosfet RdsON sense is implemented to avoid absolute maximum rating overcome on ISENx pin). The proprietary current reading circuit allows a very precise and high bandwidth reading for both positive and negative current. This circuit reproduces the current flowing through the sensing element using a high speed Track & Hold transconductance amplifier. In particular, it reads the current during the second half of the OFF time reducing noise injection into the device due to the mosfet turn-on (See fig. 3). Track time must be at least 200ns to make proper reading of the delivered current. This circuit sources a constant 100 µA current from the PGNDS pin: it must be connected through two equal Rg resistors to the groundside of the sensing element (See Figure 3). The two current reading cir- cuitry uses this pin as a reference keeping the ISENx pin to this voltage. The current that flows in the ISENx pin is then given by the following equation: Where RSENSE is an external sense resistor or the RdsON of the low side mosfet and Rg is the transcon- ductance resistor used between ISENx and PGNDS pins toward the reading points; IPHASEx is the current carried by the relative phase. The current information reproduced internally is represented by the second term of the previous equation as follow: CH3 = HGATE1; CH4 = HGATE2 CH3 = LGATE1; CH4 = LGATE2 I ISEN x 50 µA R SEN SE I PH AS Ex ⋅ R g ------------------------------------------------ 50 µAI IN FO x + = + = I IN FO x R SEN SE I PH AS Ex ⋅ R g ------------------------------------------------ = |
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