EMB39P06CS datasheet(2/5 Pages) EXCELLIANCE

2 / 5 page

2013/5/21

p.2

EMB39P06CS

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250μA

‐60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250μA

‐1.0 ‐1.8

‐3.0

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐48V, VGS = 0V

‐1

μA

VDS = ‐40V, VGS = 0V, TJ = 125 °C

‐25

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐10V ‐26

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐10V, ID = ‐20A

mΩ

VGS = ‐4.5V, ID = ‐10A

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐25V, f = 1MHz

2975

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

150

Gate Resistance

VGS = 15mV, VDS = 0V, f = 1MHz

6.5

Total Gate Charge

1,2

VDS = ‐30V, VGS = ‐10V,

ID = ‐20A

Gate‐Source Charge

1,2

Qgs

Gate‐Drain Charge

1,2

Qgd

7.5

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐10V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐10V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐17

Pulsed Current

ISM

‐65

Forward Voltage

VSD

IF = IS, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = ‐5A, dlF/dt = 100A / μS

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

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