EMB35N04CS datasheet(1/5 Pages) EXCELLIANCE

номер детали	EMB35N04CS

подробное описание детали	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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производитель	EXCELLIANCE [Excelliance MOS Corp.]

домашняя страница	http://www.excelliancemos.com/

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2013/9/3

p.1

EMB35N04CS

G

D

S

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

40V

RDSON (MAX.)

28mΩ

ID

12A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

12

A

TC = 100 °C

8

Pulsed Drain Current

1

IDM

48

Avalanche Current

IAS

10

Avalanche Energy

L = 0.1mH, ID=10A, RG=25Ω

EAS

5

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

2.5

Power Dissipation

TC = 25 °C

PD

30

W

TC = 100 °C

12

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

4.1

°C / W

Junction‐to‐Ambient

RJA

80

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

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