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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SIP41110DB датащи(PDF) 3 Page - Vishay Siliconix |
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SIP41110DB датащи(HTML) 3 Page - Vishay Siliconix |
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3 / 7 page  SiP41109/41110 Vishay Siliconix New Product Document Number: 73023 S-51104—Rev. A, 13-Jun-05 www.vishay.com 3 SPECIFICATIONSa Limits Test Conditions Unless Specified VCC = 12 V, VBOOT − VPHASE = 8 V TA = −40 to 85_C Parameter Unit Maxa Typb Mina Test Conditions Unless Specified VCC = 12 V, VBOOT − VPHASE = 8 V TA = −40 to 85_C Symbol MOSFET Drivers High Side Driver Impedance RDH(source) VBOOT VPHASE = 8 V PHASE = GND 2.3 4.2 High-Side Driver Impedance RDH(sink) VBOOT − VPHASE = 8 V, PHASE = GND 1.9 3.5 RDL(source) VPVCC = 8 V SiP41110 2.9 5.2 W Low Side Driver Impedance RDL(sink) VPVCC = 8 V SiP41110 1.3 2.4 W Low-Side Driver Impedance RDL(source) VPVCC = 12 V SiP41109 2.4 4.3 RDL(sink) VPVCC = 12 V SiP41109 1.2 2.2 High-Side Rise Time trH 10% − 90% VBOOT − VPHASE = 8 V CLOAD = 3 nF 45 High-Side Fall Time tfH 10% − 90%, VBOOT − VPHASE = 8 V, CLOAD = 3 nF 35 High-Side Rise Time Bypass 10% − 90% VBOOT − VPHASE = 12 V CLOAD = 3 nF 45 High-Side Fall Time Bypass 10% − 90%, VBOOT − VPHASE = 12 V, CLOAD = 3 nF 35 High Side Propagation Delayc td(off)H See Timing Waveforms 15 High-Side Propagation Delayc td(on)H See Timing Waveforms 15 Low Side Rise Time t L 10% − 90%, VBOOT − VPHASE = 8 V CLOAD = 3 nF SiP41110 40 ns Low-Side Rise Time trL 10% − 90%, VBOOT − VPHASE = 12 V CLOAD = 3 nF SiP41109 40 ns Low Side Fall Time tfL 10% − 90%, VBOOT − VPHASE = 8 V CLOAD = 3 nF SiP41110 30 Low-Side Fall Time tfL 10% − 90%, VBOOT − VPHASE = 12 V CLOAD = 3 nF SiP41109 30 Low Side Propagation Delay td(off)L See Timing Waveforms 15 Low-Side Propagation Delay td(on)L See Timing Waveforms 15 PHASE Timer PHASE Falling Timeoutc tPHASE 380 ns PVCC Regulator Output Voltage PVCC 7.6 8 8.4 V Output Current IPVCC 80 100 mA Current Limit ILIM VDRV = 0 V 120 200 280 mA Line Regulation LNR VCC = 10.8 V to 13.2 V 0.05 0.5 %/V Load Regulation LDR 5 mA to 80 mA 0.1 1.0 % PVCC Regulator UVLO PVCC Rising VUVLO2 6.7 7.2 V PVCC Falling VUVLO2 6.4 6.9 V Hysteresis Hyst 100 300 500 mV High-Side Undervoltage Lockout Threshold VUVHS Rising or Falling 2.5 3.35 4.0 V VCC Undervoltage Lockout Threshold VUVLO1 5.0 5.3 5.6 V Power on Reset Time POR 2.5 ms Thermal Shutdown Temperature TSD Temperature Rising 165 _C Hysteresis TH Temperature Falling 25 _C Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing and are measured at VCC = 12 V unless otherwise noted. |
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