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SIP41110DB датащи(PDF) 2 Page - Vishay Siliconix |
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SIP41110DB датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() SiP41109/41110 Vishay Siliconix New Product www.vishay.com 2 Document Number: 73023 S-51104—Rev. A, 13-Jun-05 ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V) V CC, PVCC −0.3 to 15 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BOOT, PHASE −0.3 to 55 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BOOT to PHASE −0.3 to 15 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature −40 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature 125_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipationa SO-8 770 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Impedance (QJA)b SO-8 130_C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 7.7 mW/_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V) VCC 10.8 to 13.2 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VLX .48 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CBOOT .100 nF to 1 mF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BOOT to PHASE . 8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range −40 to 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . SPECIFICATIONSa Test Conditions Unless Specified Limits Parameter Symbol VCC = 12 V, VBOOT − VPHASE = 8 V TA = −40 to 85_C Mina Typb Maxa Unit Power Supplies Supply Voltage VCC 10.8 13.2 V Quiescent Current ICCQ PWM Non-Switching 5.6 9.5 Supply Current IDD fPWM = 100 kHz CLOAD = 3 nF SiP41109 12.5 mA Supply Current IDD fPWM = 100 kHz, CLOAD = 3 nF SiP41110 11.0 mA Tristate (Shutdown) Current ICCT PWM = Open 850 1200 mA Reference Voltage Break-Before-Make VBBM 2.5 V PWM Input Input High VIH 4.0 VCC V Input Low VIL 1.0 V Bias Current IB PWM 5 V or 0 V "600 "1000 mA Tristate Threshold High VTSH 3.0 V Tristate Threshold Low VTSL 2.0 V Tristate Holdoff Timeoutc tTST 240 ns Bootstrap Diode Forward Voltage VF IF = 40 mA, TA = 25_C 0.70 0.85 1.0 V MOSFET Drivers High-Side Drive Currentc IPKH(source) VBOOT − VPHASE = 8 V 0.8 High-Side Drive Currentc IPKH(sink) VBOOT − VPHASE = 8 V 1.0 IPKL(source) VPVCC = 8 V SiP41110 0.9 A Low Side Drive Currentc IPKL(sink) VPVCC = 8 V SiP41110 1.2 A Low-Side Drive Currentc IPKL(source) VPVCC = 12 V SiP41109 1.4 IPKL(sink) VPVCC = 12 V SiP41109 1.8 |
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