SM2001CSK datasheet(4/16 Pages) SINOPWER

номер детали	SM2001CSK

подробное описание детали	Dual Enhancement Mode MOSFET (N- and P-Channel)

PDF	16 Pages

Scroll/Zoom	100%

производитель	SINOPWER [Sinopower Semiconductor Inc]

домашняя страница	http://www.sinopowersemi.com/Form2/index.aspx

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4 / 16 page

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SM2001CSK

Rev. A.4 - March, 2018

Electrical Characteristics (Cont.) (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Channel 2

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250μA

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

-1

TJ=85°C

-30

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250mA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±100

RDS(ON) Drain-Source On-state Resistance

VGS=-4.5V, IDS=-6A

VGS=-2.5V, IDS=-4A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1.2A, VGS=0V

-0.7

-1

trr

Reverse Recovery Time

Isd=-6A, dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

4.5

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

3.5

Ciss

Input Capacitance

VGS=0V,

VDS=-10V,

Frequency=1.0MHz

590

Coss

Output Capacitance

122

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=-10V, RL=10W,

IDS=-1A, VGEN=-4.5V,

RG=1W

8.4

Turn-on Rise Time

14.1

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

10.7

Gate Charge Characteristics

Total Gate Charge

VDS=-10V, VGS=-4.5V,

IDS=-6A

7.68

Qgs

Gate-Source Charge

0.66

Qgd

Gate-Drain Charge

2.72

Qgth

Threshold Gate Charge

0.3

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