SM2001CSK datasheet(3/16 Pages) SINOPWER

номер детали	SM2001CSK

подробное описание детали	Dual Enhancement Mode MOSFET (N- and P-Channel)

PDF	16 Pages

Scroll/Zoom	100%

производитель	SINOPWER [Sinopower Semiconductor Inc]

домашняя страница	http://www.sinopowersemi.com/Form2/index.aspx

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SM2001CSK

Rev. A.4 - March, 2018

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Channel 1

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

IDSS

Zero Gate Voltage Drain Current

VDS=16V, VGS=0V

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

0.5

0.7

1.0

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±100

RDS(ON) Drain-Source On-state Resistance

VGS=4.5V, IDS=9A

VGS=2.5V, IDS=6A

13.5

Diode Characteristics

VSD

Diode Forward Voltage

ISD=1.5A, VGS=0V

0.67

1.1

trr

Reverse Recovery Time

IDS=6A, dlSD/dt=100A/ms

11.8

Qrr

Reverse Recovery Charge

3.6

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

0.7

Ciss

Input Capacitance

VGS=0V,

VDS=10V,

Frequency=1.0MHz

795

Coss

Output Capacitance

160

Crss

Reverse Transfer Capacitance

118

td(ON)

Turn-on Delay Time

VDD=10V, RL=10W,

IDS=1A, VGEN=4.5V,

RG=1W

10.2

Turn-on Rise Time

16.1

td(OFF)

Turn-off Delay Time

16.6

Turn-off Fall Time

3.6

Gate Charge Characteristics

Total Gate Charge

VDS=10V, VGS=4.5V,

IDS=6A

8.7

Qgs

Gate-Source Charge

1.25

Qgd

Gate-Drain Charge

Qgth

Threshold Gate Charge

0.54

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