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PV600BA датащи(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PV600BA датащи(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() 2 G-25-3 N-Channel Enhancement Mode Field Effect Transistor PV600BA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV1.0 Forward Transconductance 1 gfs VDS = 5V, ID = 10A 40 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 616 pF Output Capacitance Coss 108 Reverse Transfer Capacitance Crss 76 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.8 Ω Total Gate Charge 2 Qg(VGS=10V) VDS = 15V , ID =10A 13.8 nC Qg(VGS=4.5V) 7.2 Gate-Source Charge 2 Qgs 1.7 Gate-Drain Charge 2 Qgd 3.9 Turn-On Delay Time 2 td(on) VDS = 15V , ID 10A, VGS = 10V, RGEN =16Ω 15 nS Rise Time 2 tr 41 Turn-Off Delay Time 2 td(off) 50 Fall Time 2 tf 27 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 1.8 A Forward Voltage 1 VSD IF = 10A, VGS = 0V 1.1 V Diode Reverse Recovery Time trr IF= 10A, dI/dt=100A/μs 12 nS Diode Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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