PV600BA datasheet(1/4 Pages) NIKOSEM

номер детали	PV600BA

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

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производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

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G-25-3

N-Channel Enhancement Mode

Field Effect Transistor

PV600BA

SOP-8

Halogen-Free & Lead-Free

NIKO-SEM

REV1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 ° C

ID

10

A

TA = 70 ° C

8

Pulsed Drain Current

1

IDM

40

Avalanche Current

IAS

17.6

Avalanche Energy

L = 0.1mH

EAS

15.5

mJ

Power Dissipation

TA = 25 ° C

PD

1.95

W

TA = 70 ° C

1.25

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

64

° C / W

Junction-to-Case

RJC

25

1Pulse width limited by maximum junction temperature.

2The value of R

θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25° C.

.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.7

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 55 ° C

10

Drain-Source On-State

Resistance1

RDS(ON)

VGS = 4.5V, ID = 10A

10.6

15

mΩ

VGS =10V, ID = 10A

8.3

10.8

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

10.8mΩ

10A

G: GATE

D: DRAIN

S: SOURCE

G

D

S

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Аналогичный номер детали - PV600BA

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