PI517BZ datasheet(2/4 Pages) NIKOSEM

номер детали	PI517BZ

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.niko-sem.com

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2 / 4 page

REV 1.0

E-19-3

P-Channel Enhancement Mode

Field Effect Transistor

PI517BZ

TO-251(IS)

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = -4.5V, ID = -9A

15.4

mΩ

VGS = -10V, ID = -12A

9.8

Forward Transconductance

gfs

VDS = -5V, ID = -12A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

2740

Output Capacitance

Coss

376

Reverse Transfer Capacitance

Crss

321

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

2.6

Total Gate Charge

Qg (VGS=10V)

VDS = -15V , VGS = -10V,

ID = -12A

Qg(VGS=4.5V)

Gate-Source Charge

Qgs

8.7

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = -15V ,

ID  12A, VGS = -10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-51

Forward Voltage

VSD

IF = -12A, VGS = 0V

-1.2

Reverse Recovery Time

trr

IF = -12A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

3Package limitation current is 40A.

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