PI517BZ datasheet(1/4 Pages) NIKOSEM

номер детали	PI517BZ

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.niko-sem.com

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REV 1.0

1

E-19-3

P-Channel Enhancement Mode

Field Effect Transistor

PI517BZ

TO-251(IS)

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

2

TC = 25 °C

ID

-55

A

TC = 100 °C

-35

Pulsed Drain Current

1

IDM

-150

Avalanche Current

IAS

-38

Avalanche Energy

L = 0.1mH

EAS

72

mJ

Power Dissipation

TC = 25 °C

PD

62

W

TC = 100 °C

25

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

2

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Package limitation current is 40A.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

-30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

-1

-1.7

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 125 °C

-10

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-30V

12mΩ

-55A

G

S

D

1. GATE

2. DRAIN

3. SOURCE

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PI517BZ датащи(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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