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PD616BA датащи(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PD616BA датащи(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV 1.0 2 E-09-3 N-Channel Enhancement Mode Field Effect Transistor PD616BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance 1 gfs VDS = 5V, ID = 20A 50 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 821 pF Output Capacitance Coss 159 Reverse Transfer Capacitance Crss 96 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.2 Ω Total Gate Charge 2 Qg(VGS=10V) VDS = 15V , ID = 20A 17.2 nC Qg(VGS=4.5V) 9.2 Gate-Source Charge 2 Qgs 1.9 Gate-Drain Charge 2 Qgd 5.2 Turn-On Delay Time 2 td(on) VDS = 15V ID 20A, VGS = 10V, RGEN =6Ω 27 nS Rise Time 2 tr 23 Turn-Off Delay Time 2 td(off) 51 Fall Time 2 tf 24 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current 3 IS 55 A Forward Voltage 1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 8.6 nS Reverse Recovery Charge Qrr 1.7 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Package limitation current is 30A |
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