PD616BA datasheet(1/4 Pages) NIKOSEM

номер детали	PD616BA

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

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производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

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REV 1.0

1

E-09-3

N-Channel Enhancement Mode

Field Effect Transistor

PD616BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

2

TC = 25 °C

ID

55

A

TC = 100 °C

35

Pulsed Drain Current

1

IDM

120

Avalanche Current

IAS

23

Avalanche Energy

L = 0.1mH

EAS

27

mJ

Power Dissipation

TC = 25 °C

PD

38

W

TC = 100 °C

15

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

3.3

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Package limitation current is 30A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.35

1.7

3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 125 °C

10

Drain-Source On-State

Resistance1

RDS(ON)

VGS = 4.5V, ID = 15A

7

9.5

mΩ

VGS = 10V , ID = 20A

5.6

7

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

7mΩ

55A

G

D

S

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