PC561BA datasheet(2/4 Pages) NIKOSEM

номер детали	PC561BA

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.niko-sem.com

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2 / 4 page

REV 1.0

F-23-1

P-Channel Enhancement Mode

Field Effect Transistor

PC561BA

SOT-89

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1.3

-1.6

-2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State

Resistance

RDS(ON)

VGS = -4.5V, ID = -4A

mΩ

VGS = -10V, ID = -4A

Forward Transconductance

gfs

VDS = -5V, ID = -4A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

585

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg(VGS=-10V)

VDS = -15V , VGS =-10V,

ID = -4A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

3.3

Turn-On Delay Time

td(on)

VDD = -15V, VGS = -10V

ID  -4A, RG = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-2

Forward Voltage

VSD

IF = -4A, VGS = 0V

-1.1

Reverse Recovery Time

trr

IF = -4A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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