PC561BA datasheet(1/4 Pages) NIKOSEM

номер детали	PC561BA

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.niko-sem.com

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REV 1.0

1

F-23-1

P-Channel Enhancement Mode

Field Effect Transistor

PC561BA

SOT-89

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-30V

45mΩ

-5.7A

G

S

D

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

-5.7

A

TA = 70 °C

-4.5

Pulsed Drain Current

1

IDM

-20

Avalanche Current

IAS

-12

Avalanche Energy

L = 0.1mH

EAS

7

mJ

Power Dissipation

3

TA = 25 °C

PD

2.5

W

TA = 70 °C

1.6

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

50

°C/W

Junction-to-Ambient

2

Steady-State

RJA

73

Junction-to-Case

Steady-State

RJc

18

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.

3The Power dissipation is based on R

JA t ≦10s value.

1. GATE

2. DRAIN

3. SOURCE

Аналогичный номер детали - PC561BA

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Wuxi U-NIKC Semiconduct...	PC561BA	791Kb / 8P	P-Channel Enhancement Mode MOSFET

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Аналогичное описание - PC561BA

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PC561BA датащи(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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Аналогичный номер детали - PC561BA

Аналогичное описание - PC561BA

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