FS8601R datasheet(4/6 Pages) FORTUNE

номер детали	FS8601R

подробное описание детали	Dual N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

производитель	FORTUNE [Fortune Semiconductor Corp.]

домашняя страница	https://www.ic-fortune.com/eng/index.asp

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4 / 6 page

FS8601R

Rev. 1.1

4/6

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

Max. 89

℃

Electrical Characteristics

Electrical Characteristics @Ta = 25℃ ( unless otherwise specified )

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 1mA

RDS(ON) 1

Static Drain-Source On-Resistance2

VGS = 4.5V, ID = 4A

mΩ

VGS = 4V, ID = 4A

VGS = 3.1V, ID = 4A

VGS = 2.5V, ID = 2A

VGS(th)

Gate Threshold Voltage

VDS =10, ID = 1mA

0.5

1.3

IDSS

Drain-Source Leakage Current (Tj = 25℃)

VDS =20V VGS = 0V

IGSS

Gate-Source Leakage

VGS = ±8V VDS =0V

Diode Characteristics

VSD 1

Diode Forward Voltage

ISD=6.5A,VGS=0V

0.75

1.2

Dynamic Characteristics 2

Ciss

Input Capacitance

VGS=0V,VDS=10V

Frequency=1MHz

1140

Coss

Output Capacitance

420

Crss

Reverse Transfer Capacitance

190

td(on)

Turn-on Delay Time

VDS=10V,VGEN=4V,

RG=1kΩ ,RL=2,86Ω ,

ID=3.5A

425

Turn-on Rise Time

1500

td(off)

Turn-off Delay Time

4000

Turn-off Rise Time

2860

Gate Charge Characteristics2

Total Gate Charge

VGS=10V,VDS=10V,

ID=6.5A

26.8

Qgs

Gate-Source Charge

1.4

Qgd

Gate-Drain Charge

5.1

Notes：

1. Pulse width ≦ 300us, duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing

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