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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS8601R датащи(PDF) 3 Page - Fortune Semiconductor Corp. |
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FS8601R датащи(HTML) 3 Page - Fortune Semiconductor Corp. |
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3 / 6 page  FS8601R Rev. 1.1 3/6 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 23 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 24 mΩ MAX. (VGS = 4V, ID = 4A) 1.1.3 RDS(ON) = 30 mΩ MAX. (VGS = 3.1V, ID = 4A) 1.1.4 RDS(ON) = 35 mΩ MAX. (VGS = 2.5V, ID = 2A) 1.1.5 ESD Rating: ≧2000V HBM 2. Applications Li-ion battery management applications 3. Ordering Information Product Number Description Package Type Quantity/Reel FS8601R DFN-8 package version DFN-8 3,000 4. Pin Assignment S1 S2 G1 G2 D D D D D F N - 8 T O P V I E W 5. Limiting Values Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 12 V ID @TA = 25℃ Continuous Drain Current3 6.5 A IDM Pulsed Drain Current1 40 A PD @TA = 25℃ Total Power Dissipation 1.4 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Is Diode Forward Current 1.2 A G1 G2 |
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