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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F030R8 датащи(PDF) 51 Page - STMicroelectronics |
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STM32F030R8 датащи(HTML) 51 Page - STMicroelectronics |
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51 / 93 page  DS9773 Rev 4 51/93 STM32F030x4/x6/x8/xC Electrical characteristics 75 where ISW is the current sunk by a switching I/O to charge/discharge the capacitive load VDDIOx is the I/O supply voltage fSW is the I/O switching frequency C is the total capacitance seen by the I/O pin: C = CINT + CEXT + CS CS is the PCB board capacitance including the pad pin. The test pin is configured in push-pull output mode and is toggled by software at a fixed frequency. 6.3.6 Wakeup time from low-power mode The wakeup times given in Table 30 are the latency between the event and the execution of the first user instruction. The device goes in low-power mode after the WFE (Wait For Event) instruction, in the case of a WFI (Wait For Interruption) instruction, 16 CPU cycles must be added to the following timings due to the interrupt latency in the Cortex M0 architecture. The SYSCLK clock source setting is kept unchanged after wakeup from Sleep mode. During wakeup from Stop or Standby mode, SYSCLK takes the default setting: HSI 8 MHz. The wakeup source from Sleep and Stop mode is an EXTI line configured in event mode. The wakeup source from Standby mode is the WKUP1 pin (PA0). All timings are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 29. Switching output I/O current consumption Symbol Parameter Conditions(1) 1. CS = 7 pF (estimated value). I/O toggling frequency (fSW) Typ Unit ISW I/O current consumption VDDIOx = 3.3 V CEXT = 0 pF C = CINT + CEXT+ CS 4 MHz 0.18 mA 8 MHz 0.37 16 MHz 0.76 24 MHz 1.39 48 MHz 2.188 VDDIOx = 3.3 V CEXT = 22 pF C = CINT + CEXT+ CS 4 MHz 0.49 8 MHz 0.94 16 MHz 2.38 24 MHz 3.99 VDDIOx = 3.3 V CEXT = 47 pF C = CINT + CEXT+ CS C = Cint 4 MHz 0.81 8 MHz 1.7 16 MHz 3.67 |
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