Electrical characteristics

VL53L1X

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DocID031281 Rev 3

5.4

Current consumption

5.5

Digital I/O electrical characteristics

1. All current consumption values include silicon process variations. Temperature and voltage are nominal

conditions (23 °C and AVDD 2v8). All values include AVDD and AVDDVCSEL.

Parameter

Min.

Typ.

Max.

Unit

HW standby

3

5

7

uA

2. In 2v8 (IOVDD) mode, pull ups have to be modified, then SW Standby consumption is increased by 0.6 µA.

469

Inter measurement

20

3. Average consumption during ranging operation in long distance mode.

4. Peak current (including VCSEL) can reach 40 mA.

16

18

mA

Average power consumption at 10 Hz with 33 ms

timing budget

20

mW

Average power consumption at 1 Hz with 20 ms

timing budget when no target detected

0.9

Average power consumption at 1 Hz with 20 ms

timing budget when target detected

1.4

Table 17. Digital I/O electrical characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Low level input voltage

-

-

0.3 IOVDD

V

High level input voltage

0.7 IOVDD

-

Low level output voltage

-0.4

High level output voltage

IOVDD-0.4

-

Operating frequency

0108

MHz

Low level input voltage

-0.5

-

0.6

V

High level input voltage

1.12

IOVDD+0.5

Low level output voltage

-0.4

1. AVDD = 0 V

-10

µA

2. AVDD = 2.85 V; I/O voltage = 1.8 V

-0.15