Elektronische Bauelemente

SSG4835PR-C

Ω

Ω

Ω

P-Ch Enhancement Mode Power MOSFET

20-Nov-2018 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1

-

-2.5

V

Gate-Body Leakage

-

-

±100

nA

-

-

-1

µA

Zero Gate Voltage Drain Current

-

-

-5

µA

-

-

21

Drain-Source On-Resistance

4

-

-

32

m

Gate Resistance

Rg

-

15

-

f=1.0MHz

Forward Transconductance

-

17

-

S

Total Gate Charge

-

12.6

-

Gate-Source Charge

-

4.8

-

Gate-Drain Charge

-

4.8

-

nC

Turn-On Delay Time

-

4.6

-

Rise Time

-

14.8

-

Turn-Off Delay Time

-

41

-

Fall Time

-

19.6

-

nS

Input Capacitance

-

1345

-

Output Capacitance

-

194

-

Reverse Transfer Capacitance

-

158

-

pF

f=1MHz

Source-Drain Diode

Continuous Source Current

1

-

-

-8

A

Pulsed Source Current

3

-

-

-50

A

Diode Forward Voltage

4

-

-

-1.2

V

℃

Reverse Recovery Time

-

16.3

-

nS

Reverse Recovery Charge

-

5.9

-

nC

℃

Notes:

1. Surface mounted on a 1 inch

2. When mounted on Min. copper pad.

3. Pulse width limited by maximum junction temperature, Pulse Width ≤300µs, Duty Cycle≤2%

4. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%