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SSG4835PR-C датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4835PR-C датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Elektronische Bauelemente SSG4835PR-C -8A, -30 V, RDS(O ) 21 mΩ Ω Ω Ω P-Ch Enhancement Mode Power MOSFET 20-Nov-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4835PR-C is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The SSG4835PR-C meet the RoHS and Green Product requirement with full function reliability approved. MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch ORDER INFORMATION MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA=25°C -8 A Continuous Drain Current VGS@10V 1 TA=70°C ID -6 A Pulsed Drain Current 3 IDM -50 A Total Power Dissipation TA=25°C PD 1.5 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 (Max.) 85 Thermal Resistance Junction-Ambient 2 RθJA 125 Thermal Resistance Junction-Case 1 (Max.) RθJC 36 °C / W Part Number Type SSG4835PR-C Lead (Pb)-free and Halogen-free SOP-8 S S S G D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.79 6.20 H 0.33 0.51 B 4.70 5.11 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.3 1.752 E 0.40 1.27 M 0 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. 4835P = Date Code |
Аналогичный номер детали - SSG4835PR-C |
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Аналогичное описание - SSG4835PR-C |
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