SSF2102-C datasheet(2/4 Pages) SECOS

2 / 4 page

SSF2102-C

2.1A, 20V, RDS(ON) 60 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

02-Jan-2018 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Gate-Threshold Voltage

VGS(th)

0.5

1.2

VDS=VGS, ID=250µA

Forward Transconductance

gfs

VDS=5V, ID=3A

Gate-Source Leakage Current

IGSS

±100

VGS= ±8V, VDS=0

Drain-Source Leakage Current

IDSS

µA

VDS=20V, VGS=0, TJ=25°C

VDS=20V, VGS=0, TJ=55°C

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=3.6A

VGS=2.5V, ID=3.1A

Total Gate Charge

6.2

ID=3A

VDS=15V

VGS=4.5V

Gate-Source Charge

Qgs

0.36

Gate-Drain Change

Qgd

1.56

Turn-on Delay Time

Td(on)

1.4

VDS=10V

VGS=4.5V

RG=3.3

ID=3A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

5.6

Input Capacitance

Ciss

382

VGS=0

VDS=15V

f =1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Continuous Source Current (Body Diode)

2.1

Pulsed Source Current

ISM

Forward On Voltage

VSD

1.2

IS=0.94A, VGS=0

Reverse Recovery Time

Trr

5.7

IS=3A, VGS=0V

dI/dt=100A/µs

Reverse Recovery Charge

Qrr

1.8

Notes:

The data tested by surface mounted on a 1 inch

2 FR4 board with 2OZ copper.

Surface mounted on FR4 board.

Pulse width limited by Max. junction temperature.

Pulse width

300

≦

µs, duty cycle≦2%.

SSF2102-C датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSF2102-C датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

датащи скачать

ссылки URL