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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSF2102-C датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSF2102-C датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSF2102-C 2.1A, 20V, RDS(ON) 60 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 02-Jan-2018 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSF2102-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SSF2102-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-323 3K 7 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 @V GS=4.5V ID 2.1 A 1.7 Pulsed Drain Current 3 IDM 8 A Maximum Power Dissipation 1 PD 0.33 W Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1 RθJA t≦5s, 378 °C/W Steady state, 480 Thermal Resistance Junction-Ambient 2 625 Part Number Type SSF2102-C Lead (Pb)-free and Halogen-free SOT-323 TS2 Top View Top View A L C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.1 REF. B 1.80 2.45 H 0.525 REF. C 1.1 1.4 J 0.08 0.25 D 0.80 1.10 K 0.8 TYP. E 1.20 1.40 L 0.65 TYP. F 0.15 0.40 |
Аналогичный номер детали - SSF2102-C |
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Аналогичное описание - SSF2102-C |
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ссылки URL |
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