AP6502A

Document number: DS35812 Rev. 4 - 2

3 of 14

www.diodes.com

August 2015

© Diodes Incorporated

AP6502A

Symbol

Parameter

Rating

Unit

Supply Voltage

-0.3 to +26

V

Switch Node Voltage

V

Bootstrap Voltage

V

Feedback Voltage

-0.3V to +6

V

Enable/UVLO Voltage

-0.3V to +6

V

Comp Voltage

-0.3V to +6

V

Storage Temperature

-65 to +150

°C

Junction Temperature

+150

°C

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

3

kV

MM

Machine Model

250

V

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability

may be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Symbol

Parameter

Rating

Unit

Junction to Ambient

SO-8EP

74

°C/W

Junction to Case

SO-8EP

16

Note:

6. Test condition: SO-8EP: Device mounted on 1" x 1" FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and

thermal vias to bottom layer ground plane.

Symbol

Parameter

Min

Max

Unit

Supply Voltage

4.75

23

V

Operating Ambient Temperature Range

-40

+85

°C

Note:

7. The device function is not guaranteed outside of the recommended operating conditions.