Elektronische Bauelemente

SCG2035

-Channel Enhancement MOSFET

20-Jul-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

20

-

-

V

Gate Threshold Voltage

0.45

-

1

V

Forward Transfer conductance

-

2

-

S

Gate-Body Leakage Current

-

-

±10

µA

-

-

1

Drain-Source Leakage Current

-

-

25

µA

-

-

350

-

-

700

Static Drain-Source On-Resistance

4

-

-

950

m

Total Gate Charge

-

1.3

-

Gate-Source Charge

-

0.5

-

Gate-Drain (“Miller”) Change

-

0.1

-

nC

Turn-on Delay Time

-

2.6

-

Rise Time

-

16

-

Turn-off Delay Time

-

29.8

-

Fall Time

-

11

-

nS

Input Capacitance

-

64

-

Output Capacitance

-

17

-

Reverse Transfer Capacitance

-

20

-

pF

f=1MHz

Source-Drain Diode

Continuous Source Current

1

-

-

0.65

A

Pulsed Source Current

3

-

-

1.6

A

Forward On Voltage

4

-

-

1.2

V

Reverse Recovery Time

trr

-

4.9

-

nS

Reverse Recovery Charge

Qrr

-

1

-

nC

dI/dt=100A/µs ,

Notes:

1.

Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.

When mounted on Min. copper pad.

3.

The power dissipation is limited by 150℃ junction temperature

4.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%