SCG2035 datasheet(1/4 Pages) SECOS

номер детали	SCG2035

подробное описание детали	N-Channel Enhancement MOSFET

PDF	4 Pages

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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1 / 4 page

Elektronische Bauelemente

SCG2035

0.65A, 20V, RDS(O ) 350m

-Channel Enhancement MOSFET

20-Jul-2017 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Reliable and Rugged

Green Device Available

APPLICATION

Power Management in Notebook Computer,

Portable Equipment and Battery Powered Systems.

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-523

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

TA=25°C

0.65

A

Continuous Drain Current

1, V

GS@4.5V

TA=70°C

ID

0.52

A

Pulsed Drain Current

3

IDM

1.6

A

Power Dissipation

TA=25°C

PD

0.3

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Thermal Resistance from Junction to Ambient

1

417

Thermal Resistance from Junction to Ambient

2

RθJA

833

°C / W

G5

Top View

A

L

M

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.5

1.7

G

-

0.1

B

1.45

1.75

H

0.55 REF.

C

0.7

0.9

J

0.1

0.2

D

0.7

0.9

K

-

E

0.9

1.1

L

0.5 TYP.

F

0.15

0.35

M

0.25

0.35

SOT-523

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