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IXBH2N250 датащи(PDF) 5 Page - IXYS Corporation

номер детали IXBH2N250
подробное описание детали  Monolithic Bipolar MOS Transistor
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXBH2N250 датащи(HTML) 5 Page - IXYS Corporation

  IXBH2N250 Datasheet HTML 1Page - IXYS Corporation IXBH2N250 Datasheet HTML 2Page - IXYS Corporation IXBH2N250 Datasheet HTML 3Page - IXYS Corporation IXBH2N250 Datasheet HTML 4Page - IXYS Corporation IXBH2N250 Datasheet HTML 5Page - IXYS Corporation  
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© 2017 IXYS CORPORATION, All Rights Reserved
IXBH2N250
IXBT2N250
IXYS REF: B_2N250 (2P) 6-16-09
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
0
50
100
150
200
250
300
350
400
450
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC - Amperes
RG = 47Ω, VGE = 15V
VCE = 2KV
TJ = 125
oC
TJ = 25
oC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
150
200
250
300
350
400
450
500
550
600
40
80
120
160
200
240
280
RG - Ohms
20
25
30
35
40
45
50
55
60
65
t r
td(on)
TJ = 125
oC, VGE = 15V
VCE = 2KV
I C = 4A, 2A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
280
320
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
40
50
60
70
80
90
100
110
120
t f
td(off)
RG = 47Ω, VGE = 15V
VCE = 2KV
I C = 4A
I C = 2A
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
0
40
80
120
160
200
240
280
320
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC - Amperes
40
50
60
70
80
90
100
110
120
t f
td(off)
RG = 47Ω, VGE = 15V
VCE = 2KV
TJ = 25
oC, 125oC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
50
100
150
200
250
300
350
400
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 47Ω, VGE = 15V
VCE = 2KV
I C = 2A
I C = 4A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
320
360
40
80
120
160
200
240
280
RG - Ohms
30
60
90
120
150
180
210
240
270
300
t f
td(off)
TJ = 125
oC, VGE = 15V
VCE = 2KV
I C = 4A
I C = 2A



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