IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBH2N250

IXBT2N250

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fS

I

0.85

1.40

S

C

ies

145

pF

C

oes

V

8.7

pF

C

res

3.2

pF

Q

g

10.6

nC

Q

ge

I

0.8

nC

Q

gc

6.2

nC

t

d(on)

30

ns

t

r

180

ns

t

d(off)

70

ns

t

f

182

ns

t

d(on)

30

ns

t

r

280

ns

t

d(off)

74

ns

t

f

178

ns

R

thJC

3.90

R

thCS

0.21

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching times, T

I

V

Resistive Switching times, T

I

V

Reverse Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

2.4

V

t

rr

0.92

μs

I

RM

9.80

A

Q

RM

4.50

μC

I

V

Note 1. Pulse test, t

TO-247 Outline

TO-268 Outline

Pins: 1 - Gate

2,4 - Collector

3 - Emitter

Pins: 1 - Gate

2,4 - Collector

3 - Emitter

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.