ACE4600M datasheet(1/6 Pages) ACE

номер детали	ACE4600M

подробное описание детали	N-Channel 60-V (D-S) MOSFET

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE4600M

N-Channel 60-V (D-S) MOSFET

VER 1.1

1

Description

The ACE4600M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a kelvin connection to the source, which may be used to bypass the source inductance.

Features



Low rDS(on) trench technology



Low thermal impedance



Fast switching speed

Applications



White LED boost converters



Automotive Systems



Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

a

TA=25

OC

ID

15

A

TA=70

OC

11.6

Pulse Drain Current

b

IDM

50

Continuous Drain Current (Diode Continuous)

a

IS

7.3

A

Power Dissipation

a

TA=25

OC

PD

5

W

TA=70

OC

3.2

Operating Junction and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t≦10sec

RθJA

25

℃/W

Steady State

65

℃/W

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (mΩ)

ID(A)

60

16@ VGS = 4.5V

15

19@ VGS = 2.5V

13

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Аналогичный номер детали - ACE4600M

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