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ACE4600M датащи(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE4600M датащи(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 6 page ![]() ACE4600M N-Channel 60-V (D-S) MOSFET VER 1.1 2 Packaging Type Ordering information DFN5*6-8L ACE4600M XX + H Electrical Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.5 V Gate Body Leakage IGSS VDS=0V, VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-48V, VGS=0V 1 uA VDS=48V, VGS=0V, TJ=55℃ 25 On-State Drain-Current a ID(on) VDS=5V, VGS=4.5V 20 A Static Drain-Source On-Resistance a rDS(ON) VGS=4.5V,ID=11.6A 16 m Ω VGS=2.5V,ID=9.3A 19 Forward Transconductance a gfS VDS=15V,ID=11.6A 20 S Diode Forward Voltage a VSD IS=3.65A ,VGS=0V 0.69 V Dynamic b Total Gate Charge Qg VDS=30V, VGS=4.5V, ID=11.6A 37 nC Gate-Source Charge Qgs 4.7 Gate-Drain Charge Qgd 9 Turn-On Delay Time td(on) VDS=30V, ,RL=2.6Ω ID=11.6A ,VGEN=10V RGEN=6Ω, 15 ns Rise Time tf 31 Turn-Off Delay Time td(off) 148 Fall Time tf 46 Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz 3326 pF Output Capacitance Coss 180 Reverse Transfer Capacitance Crss 163 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing . PN : DFN5*6-8L Pb - free Halogen - free |
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