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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PAM8404 датащи(PDF) 5 Page - Diodes Incorporated |
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PAM8404 датащи(HTML) 5 Page - Diodes Incorporated |
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5 / 18 page  PAM8404 Document number: DSxxxxx Rev. 1 - 1 5 of 18 www.diodes.com November 2012 © Diodes Incorporated PAM8404 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.) WCSP2x2-16 Symbol Parameter Test Conditions Min Typ Max Units VDD Supply Power 2.5 5.5 V PO Output Power THD+N = 10%, f = 1kHz, RL = 4Ω VDD = 5.0V 2.2 W VDD = 3.6V 1.2 THD+N = 1%, f = 1kHz, RL = 4Ω VDD = 5.0V 1.8 W VDD = 3.6V 1 THD+N = 10%, f = 1kHz, RL = 8Ω VDD = 5.0V 1.5 W VDD = 3.6V 0.8 THD+N = 1%, f = 1kHz, RL = 8Ω VDD = 5.0V 1.2 W VDD = 3.6V 0.6 THD+N Total Harmonic Distortion Plus Noise VDD = 5.0V, Po = 0.5W, RL = 8Ω f = 1kHz 0.3 % VDD = 3.6V, Po = 0.5W, RL = 8Ω 0.4 VDD = 5.0V, Po = 1W, RL = 4Ω f = 1kHz 0.3 % VDD = 3.6V, Po = 1W, RL = 4Ω 0.2 PSRR Power Supply Ripple Rejection VDD = 5.0V, Inputs AC-Grounded with CIN = 1.0μF f = 217kHz -50 dB CS Crosstalk VDD = 5.0V, Po = 0.5W, RL = 4Ω, Gv = 23dB f = 1kHz -70 dB SNR Signal-to-Noise VDD = 5V, VORMS = 1VGv = 23dB A-weighting 85 dB VN Output Noise VDD = 5V, Inputs AC-Grounded with CIN = 0.47μF A-weighting 34 µV BW 22Hz – 22kHz No A-weighting 54 Dyn Dynamic Range VDD = 5V, THD = 1% A-weighting 98 dB η Efficiency RL = 8Ω, THD = 10% f = 1kHz 85 % RL = 4Ω, THD = 10% 75 IQ Quiescent Current VDD = 5.0V No load 12 mA VDD = 3.6V 7 ISD Shutdown Current VDD = 2.5V to 5.5V VSD = 0.3V < 1 µA RDS(ON) Static Drain-to-Source On-State Resistor IDS = 500mA,VGS = 5V PMOS 500 mΩ NMOS 460 fsw Switching Frequency VDD = 5V 300 kHz VOS Output Offset Voltage VIN = 0V, VDD = 5V 20 mV Gain Closed-Loop Voltage Gain VDD = 5V, RL = 4Ω, f = 1kHz G0 = L, G1 = L 6 dB G0 = H, G1 = L 12 G0 = L, G1 = H 18 G0 = H, G1 = H 24 OTP Over Temperature Protection No Load, Junction Temperature VDD = 5V 150 °C OTH Over Temperature Hysterisis 50 |
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