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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PAM8404 датащи(PDF) 4 Page - Diodes Incorporated |
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PAM8404 датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 18 page  PAM8404 Document number: DSxxxxx Rev. 1 - 1 4 of 18 www.diodes.com November 2012 © Diodes Incorporated PAM8404 A Product Line of Diodes Incorporated Thermal Information Parameter Package Symbol Max Unit Thermal Resistance (Junction to Ambient) WCSP2x2-16 θJA 64 °C/W QFN4x4-20 31 Thermal Resistance (Junction to Case) WCSP2x2-16 θJC — QFN4x4-20 13 Electrical Characteristics (@TA = +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.) QFN4X4-20 Symbol Parameter Test Conditions Min Typ Max Units VDD Supply Power 2.5 5.5 V PO Output Power THD+N = 10%, f = 1kHz, RL = 4Ω VDD = 5.0V 3 W VDD = 3.6V 1.5 THD+N = 1%, f = 1kHz, RL = 4Ω VDD = 5.0V 2.35 W VDD = 3.6V 1.2 THD+N = 10%, f = 1kHz, RL = 8Ω VDD = 5.0V 1.7 W VDD = 3.6V 0.9 THD+N = 1%, f = 1kHz, RL = 8Ω VDD = 5.0V 1.4 W VDD = 3.6V 0.7 THD+N Total Harmonic Distortion Plus Noise VDD = 5.0V, Po = 0.5W, RL = 8Ω f = 1kHz 0.15 % VDD = 3.6V, Po = 0.5W, RL = 8Ω 0.27 VDD = 5.0V, Po = 1W, RL = 4Ω f = 1kHz 0.23 % VDD = 3.6V, Po = 1W, RL = 4Ω 0.24 PSRR Power Supply Ripple Rejection VDD = 5.0V, Inputs AC-Grounded with CIN = 1.0μF f = 100kHz -48 dB f = 1kHz -63 CS Crosstalk VDD = 5V, Po = 0.5W, RL = 4Ω, Gv = 23dB f = 1kHz -93 dB SNR Signal-to-Noise VDD = 5V, VORMS = 1VGv = 23dB A-weighting 87 dB VN Output Noise VDD = 5V, Inputs AC-Grounded with CIN = 1μF A-weighting 43 µV BW 22Hz – 22kHz No A-weighting 59 Dyn Dynamic Range VDD = 5V, THD = 1% A-weighting 97 dB η Efficiency RL = 8Ω, THD = 10% f = 1kHz 89 % RL = 4Ω, THD = 10% 84 IQ Quiescent Current VDD = 5.0V No load 11 mA VDD = 3.6V 6 ISD Shutdown Current VDD = 5.5V VSD = 0.3V < 1 µA RDS(ON) Static Drain-to-Source On-State Resistor IDS = 500mA,VGS = 5V PMOS 250 mΩ NMOS 170 fsw Switching Frequency VDD = 3V to 5V 300 kHz VOS Output Offset Voltage VIN = 0V, VDD = 5V 10 mV Gain Closed-Loop Voltage Gain VDD = 5V, RL = 4Ω, f = 1kHz G0 = L, G1 = L 6 dB G0 = H, G1 = L 12 G0 = L, G1 = H 18 G0 = H, G1 = H 24 OTP Over Temperature Protection No Load, Junction Temperature VDD = 5V 150 °C OTH Over Temperature Hysterisis 50 |
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