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IXTP110N12T2 датащи(PDF) 5 Page - IXYS Corporation

номер детали IXTP110N12T2
подробное описание детали  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
PDF  6 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP110N12T2 датащи(HTML) 5 Page - IXYS Corporation

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IXTA110N12T2
IXTP110N12T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
16
20
24
28
32
36
40
40
60
80
100
120
140
160
180
200
220
ID - Amperes
RG = 2Ω , VGS = 10V
VDS = 60V
TJ = 150
oC
TJ = 25
oC
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
140
160
2
3456
789
10
RG - Ohms
15
20
25
30
35
40
45
50
55
I D = 110A
t f
td(off)
TJ = 150
oC, VGS = 10V
VDS = 60V
I D = 220A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
TJ - Degrees Centigrade
10
20
30
40
50
60
70
80
90
t f
td(off)
RG = 2Ω, VGS = 10V
VDS = 60V
I D = 220A
I D = 110A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
12
13
14
15
16
17
18
19
40
60
80
100
120
140
160
180
200
220
ID - Amperes
10
20
30
40
50
60
70
80
t f
td(off)
RG = 2Ω, VGS = 10V
VDS = 60V
TJ = 25
oC
TJ = 150
oC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
16
20
24
28
32
36
40
25
50
75
100
125
150
TJ - Degrees Centigrade
RG = 2Ω , VGS = 10V
VDS = 60V
I D = 220A
I D = 110A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
23
4
5
6
7
8
9
10
RG - Ohms
10
20
30
40
50
60
70
80
90
100
t f
td(off)
TJ = 150
oC, VGS = 10V
VDS = 60V
I D = 220A
I D = 110A



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