IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN240N25X3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

240

A

I

SM

Repetitive, pulse Width Limited by T

JM

960

A

V

SD

I

1.4

V

t

rr

165

ns

Q

RM

3.7

μC

I

RM

45.6

A

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

80

135

S

R

Gi

Gate Input Resistance

1.8



C

iss

23.8

nF

C

oss

V

3.7

nF

C

rss

1.5

pF

C

o(er)

1400

pF

C

o(tr)

5480

pF

t

d(on)

36

ns

t

r

32

ns

t

d(off)

180

ns

t

f

14

ns

Q

g(on)

345

nC

Q

gs

V

112

nC

Q

gd

72

nC

R

thJC

0.18

C/W

R

thCS

0.05

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.