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PBLS1503V датащи(PDF) 8 Page - NXP Semiconductors |
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PBLS1503V датащи(HTML) 8 Page - NXP Semiconductors |
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8 / 14 page ![]() 9397 750 13435 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 25 November 2004 8 of 14 Philips Semiconductors PBLS1503Y; PBLS1503V 15 V PNP BISS loadswitch VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. Fig 9. TR2(NPN): DC current gain as a function of collector current; typical values. Fig 10. TR2(NPN): Collector-emitter saturation voltage as a function of collector current; typical values. VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. VCE =5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. Fig 11. TR2(NPN): On-state input voltage as a function of collector current; typical values. Fig 12. TR2(NPN): Off-state input voltage as a function of collector current; typical values. IC (mA) 10−1 102 10 1 006aaa034 102 10 103 hFE 1 (1) (2) (3) IC (mA) 1102 10 006aaa035 10−1 1 VCEsat (V) 10−2 (1) (2) (3) 006aaa036 IC (mA) 10−1 102 10 1 1 10 VI(on) (V) 10−1 (2) (3) (1) 006aaa037 IC (mA) 10−2 10 1 10−1 1 10 VI(off) (V) 10−1 (1) (2) (3) |
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